ROBERT MROCZYŃSKI, PhD DSc
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EUROSOI - ULIS'2020
March 29 th - April 3 th, 2020, Caen (France)
Incorporation of silicon-carbide (SiC) nanocrystals in the MIM structures based on pulsed-DC reactively sputtered HfOx layers
Frequency modulated C-V characteristics Shift in double-layer High-k gate stack MIS devices
The main objective of HYPERMAT project is to develop an innovative technology of tunable multilayer hyperbolic
metamaterials (THMMs) operating in NIR and MIR frequency ranges. Such structures exhibit extraordinary features unprecedented in commercially available state-of-the-art photonic solutions, resulting from unusual dispersion characteristics which can be controlled by an external electric field. THMMs can be used as efficient, adaptive antireflective coatings (AR) or as tunable edge-filters in photonic components commercially offered by our large industrial partner, i.e., PCO S.A. The development of the technology of tunable hyperbolic metamaterials, demonstration of the proof of concept, and transfer of the technology to PCO S.A. could become the foundation for the technological platform of a novel class of photonic components, which would significantly enrich PCO S.A.’s commercial offer and become a strong impulse for the development of innovative national photonics industry, offering products globally. We expect that project results will contribute to the development of science related to nanotechnology and photonics. An intensive cooperation between Consortium partners will emerge to advance scientific leadership of the Polish scientific units as the leaders in the modeling, technology and characterization of
photonic devices including nanostructures based on THMMs.
The NaMSeN project (Nanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles) aims to advance the field of group-IV semiconductor nanostructures in the new stage closer to photonic applications by overcoming intrinsic limitations of these materials (namely the low absorption cross section and emission rate due to the dominating indirect transitions.
My role in this project is to develop the technology of Metal-Oxide-Semiconductor (MOS) structures with Si-NCs. The devices could be built around either spinned-on Si nanocrystals or recrystallized Si nanocrystals fabricated by means of PECVD method followed by high temperature annealing.