Robert Mroczyński, PhD DSc

Diploma topic areas

(Faculty of Electronics and Information Technologies)

​Topic 1

Technology and characterization of MOS structures with silicon nanocrystals (Si-NCs)

• transfer of Si-NCs onto arbitrary substrates

• optimization of dielectric layers fabrication as the nanocrystals ensembles

• electrical characterization of fabricated MOS structures

• fabrication of MOS structures with Si-NCs for memory applications

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Topic 2

TFT materials, devices, and structures

• technology and characterization of IGZO layers

• technology and characterization of high-k materials as the gate dielectrics

• 'top-gate' and 'bottom-gate' TFTs technology development and optimization

• fabrication of transparent materials and optical characterization

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Topic 3

Fabrication and characterization of MOS structures with thin, and ultra-thin gate dielectric materials

• optimization of PECVD ultra-thin gate dielectric materials

• fabrication of MOS structures with PECVD gate dielectric layers

• electrical characterization of obtained structures

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Topic 4

Ultra-shallow plasma ion implantation - the phenomenon, technology development, and optimization

• implementation of ultra-shallow ion plasma implantation into MOS technology

• electrical characterization of fabricated MOS devices

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Topic 5

Optoelectronic materials, structures, and devices

• technology development and optimization of multi-layers composed of semiconductor and dielectric materials in ultra-thin regime

• technology and characterization of hybrid polymer structures composed of InP active devices and polymer waveguide functionalized by graphene

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Topic 6

M(O)EMS technologies

• technology of dielectric materials with low internal stress

• wet and dry anisotropic etching of silicon

• fabrication of 'free-standing' structures by means of sacrificial materials

• technology os M(O)EMS sensing devices and structures