Diploma topic areas
(Faculty of Electronics and Information Technologies)
Topic 1
Technology and characterization of MOS structures with silicon nanocrystals (Si-NCs)
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transfer of Si-NCs onto arbitrary substrates
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optimization of dielectric layers fabrication as the nanocrystals ensembles
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electrical characterization of fabricated MOS structures
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fabrication of MOS structures with Si-NCs for memory applications
Topic 2
TFT materials, devices, and structures
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technology and characterization of IGZO layers
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technology and characterization of high-k materials as the gate dielectrics
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'top-gate' and 'bottom-gate' TFTs technology development and optimization
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fabrication of transparent materials and optical characterization
Topic 3
Fabrication and characterization of MOS structures with thin, and ultra-thin gate dielectric materials
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optimization of PECVD ultra-thin gate dielectric materials
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fabrication of MOS structures with PECVD gate dielectric layers
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electrical characterization of obtained structures
Topic 4
Ultra-shallow plasma ion implantation - the phenomenon, technology development, and optimization
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implementation of ultra-shallow ion plasma implantation into MOS technology
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electrical characterization of fabricated MOS devices
Topic 5
Optoelectronic materials, structures, and devices
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technology development and optimization of multi-layers composed of semiconductor and dielectric materials in ultra-thin regime
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technology and characterization of hybrid polymer structures composed of InP active devices and polymer waveguide functionalized by graphene
Topic 6
M(O)EMS technologies
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technology of dielectric materials with low internal stress
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wet and dry anisotropic etching of silicon
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fabrication of 'free-standing' structures by means of sacrificial materials
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technology os M(O)EMS sensing devices and structures