Tailoring optical properties of conductive/dielectric layers and their periodic stacks using DoEThis study presents the results of the optimization of the optical properties of TiN and TiOx thin films by employing Taguchi orthogonal...
Effect of Annealing on Optical, Mechanical, Electrical Properties and Structure of Scandium Oxide FiScandium oxide (Sc2O3) films are deposited by reactive magnetron sputtering. The effects of annealing on the structure, as well as the...
Optimization of optical properties of titanium nitride (TiN) thin-filmsTitanium nitride (TiN) finds numerous valuable applications in microelectronics, e.g.: as a diffusion barrier, an adhesion layer,...
Colloidal all-inorganic nanocrystals in MIS structures and devicesIt is commonly observable the ongoing development and investigations of the structures with nanocrystals (NCs) embedded in dielectric...
Electro-physical properties of gate-last MOSFETs with low-temperature SiOxNy/HfOx stackThe aggressive scaling of modern MOS (Metal-Oxide-Semiconductor) structures have brought the thickness of gate dielectric layers into a...
Technology and characterization of MIS structures with co doped silicon nanocrystals (Si NCs) embeddIn this work, the technology of the metal-insulator-semiconductor (MIS) structures with co-doped silicon nanocrystals (Si‑NCs) embedded...
Effects of Ultra-shallow Ion Implantation from RF plasma on electrical properties of 4H-SiC MIS struThis study presents the first results concerning technology and characterization of MIS structures with double-gate dielectric stacks...
Double-gate dielectric stacks for NVSM (flash) memoriesIt is commonly perceptible that flash memories based on NAND and NOR logic gates are experiencing tremendous growth because of new and...
Thin-Film Transistors (TFTs) with novel amorphous semiconductor and high-k dielectric layerThis paper is devoted to the technology and characterization of TFT with novel amorphous semiconductor layers, i.e., Indium-Gallium-Zinc...
