Scandium oxide (Sc2O3) films are deposited by reactive magnetron sputtering. The effects of annealing on the structure, as well as the optical, mechanical, and electrical properties are investigated. The detailed investigation of the mechanical properties and high load...

Titanium nitride (TiN) finds numerous valuable applications in microelectronics, e.g.: as a diffusion barrier, an adhesion layer, Schottky barrier contact or conductive gate material [1]. The optical properties of TiN films such as selectively spectral range of optical...

It is commonly observable the ongoing development and investigations of the structures with nanocrystals (NCs) embedded in dielectric layers due to their potential applications in the field of optoelectronics and photonics. The literature reports that the metal-insulat...

The aggressive scaling of modern MOS (Metal-Oxide-Semiconductor) structures have brought the thickness of gate dielectric layers into a fundamental limit, and thus, the introduction of high-k dielectric materials into a gate-stack. As a consequence, several problems of...

In this work, the technology of the metal-insulator-semiconductor (MIS) structures with co-doped silicon nanocrystals (Si‑NCs) embedded in hafnium oxide (HfOx) dielectric layer is presented. The results of structural and electrical characterization of the fabricated te...

This study presents the first results concerning technology and characterization of MIS structures with double-gate dielectric stacks fabricated on 4H-SiC substrates after ultra-shallow fluorine and nitrogen implantation from RF plasma. The gate stack was composed of u...

It is commonly perceptible that flash memories based on NAND and NOR logic gates are experiencing tremendous growth because of new and more demanding applications in, particular, low power solid-state storage and mobile devices. The key technologies for nowadays Non-Vo...

This paper is devoted to the technology and characterization of TFT with novel amorphous semiconductor layers, i.e., Indium-Gallium-Zinc Oxide (IGZO). Due to the higher mobility, i.e., significantly greater than 10 cm2V-1s-1, steeper sub-threshold swing (<200 mV/decade...

For the past several years silicon nanocrystals (Si-NCs) embedded in dielectric layers have been extensively investigated for potential applications in the fields, such as optoelectronics and photonics. The literature reports that materials which are composed of altern...