This paper is devoted to the technology and characterization of TFT with novel amorphous semiconductor layers, i.e., Indium-Gallium-Zinc Oxide (IGZO). Due to the higher mobility, i.e., significantly greater than 10 cm2V-1s-1, steeper sub-threshold swing (<200 mV/decade), and long-range uniformity, an amorphous IGZO (a-IGZO) Thin-Film Transistors have received considerable attention in the field of display applications.
In the first part of this study we present the optimization of the fabrication of a-IGZO thin films. The main criterion for optimization is the controllable fabrication of amorphous semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The second part of this study is devoted to the technology of gate stack fabrication. In recent years, high-k dielectric oxides are increasingly investigated in the study of TFT structures for the new generation of active LED displays. In the course of this work, TFTs will be fabricated by means of staggered top-gate technology, with the single HfOx deposited at room temperature gate dielectric layer.
More information you can find in the poster below. It was presented recently at the Electron Technology Conference in Wisła (2016).