Technology and characterization of MIS structures with co doped silicon nanocrystals (Si NCs) embedded in hafnium oxide (HfOx) ultra thin layers

July 14, 2017

In this work, the technology of the metal-insulator-semiconductor (MIS) structures with co-doped silicon nanocrystals (Si‑NCs) embedded in hafnium oxide (HfOx) dielectric layer is presented. The results of structural and electrical characterization of the fabricated test structures are discussed. A good agreement between measurements of thickness of the Si‑NC layers for the spectroscopic ellipsometry and AFM methods was obtained. The spectroscopic analysis demonstrated a presence of Si-NCs of optical properties similar to the monocrystalline silicon. A simulation of the capacitance-voltage-time and current-voltage-time characteristics gave results of a qualitative agreement with the measurement data. Comparative stress-and-sense measurements (I‑t) for the MIS structures with and without silicon nanocrystals proved the essential difference resulting from the charging/discharging processes of the nanocrystals.


More information you can find here: Microelectronic Engineering 178, 298-303 (2017).




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© 2016 by Robert Mroczyński.

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