It is commonly observable the ongoing development and investigations of the structures with nanocrystals (NCs) embedded in dielectric layers due to their potential applications in the field of optoelectronics and photonics. The literature reports that the metal-insulator-semiconductor (MIS) structures with embedded nanocrystals attract significant attention because of their potential applications in several types of memory structures, especially in the Nonvolatile Semiconductor Memory (NVSM) and Resistive Random Access Memory (RRAM) devices. In this work, the technology of the metal-insulator-semiconductor (MIS) structures with silicon (Si) and silicon-carbide (SiC) nanocrystals embedded in dielectric layers are presented. The results of electrical characterization of the fabricated test structures are discussed. Comparative electrical measurements of the MIS structures with and without NCs proved the essential difference resulting from the charging/discharging processes of the nanocrystals and significant improvement in retention time. Moreover, application of NCs in the RRAM structures are also investigated.